Measure engineered strain distributions in modern semiconductor devices
via PED-enhanced NBD

Enhanced nanobeam diffraction resolves strain at the nanometer scale

Acquisition of Virtual STEM reference image

Ultra-fast nanobeam precession electron diffraction scanned acquisition

Automated local strain analysis via proprietary algorithm

Optimized analysis for FinFET devices

Spatial resolution < 2 nm attainable (FEG TEM)

Strain sensitivity < 2 x 10-4 (FEG TEM)

Intuitive workflow

See the Strain Analysis Video

Strain Imaging of a SiGe (62/38 at.%) blanket film, showing a dislocation at the Si-SiGe interface

Strain Imaging in GaN HEMT device   Download PDF for source details